HSEM series electromagnet Hall effect test system consists of electromagnet, Hall tester, controller, sample temperature option and other components. According to the selection of different configurations can achieve ± 1.5T magnetic field, 10K sample temperature, 1273K sample temperature and other performance. It has the characteristics of large magnetic field range and wide temperature zone. It can satisfy the customers to measure the resistivity, carrier concentration, carrier type, Hall coefficient, electron mobility and other parameters of the material under different temperatures or different magnetic fields.

Features:
- With continuously variable magnetic field environment, can choose ± 0.8T or ± 1.5T two configurations
- A wide range of temperature options, including: room temperature, liquid nitrogen single point, 10K-400K closed-cycle low-temperature options, room temperature-1273K high-temperature options.
- Mobility range: 0.01-10^6
- Measurable sample resistance range: 10mΩ-100GΩ
- Carrier concentration: 8 × 102 to 8 × 1023 cm-3
- Room temperature shielding box provides a room temperature testing environment for samples. A variety of room temperature sample cards are provided to meet the Hall testing of samples of various specifications.
- The cryostat and the room temperature shielding box can be quickly switched by the slide, which can quickly switch samples or change the sample environment to improve the efficiency of sample change.

Test materials:
- Thermoelectric materials: bismuth telluride, lead telluride, silicon germanium alloys, etc.
- Photovoltaic materials/solar cells: (A silicon (monocrystalline silicon, amorphous silicon) CIGS (copper indium gallium selenide), cadmium telluride, chalcogenide, etc.)
- Organic Materials: (OFET, OLED)
- Transparent Conductive Metal Oxide TCO: (ITO, AZO, ZnOIGZO (Indium Gallium Zinc Oxide), etc.)
- Semiconductor materials: SiGe, InAs, SiC, InGaAs, GaN, SiC, InP, ZnO, Ga2O3, etc.
- Two-dimensional materials: graphene, BN, MoS2